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| savantic semiconductor product specification silicon npn power transistors 2SC3257 d escription with to-220 package high collector breakdown voltage excellent switching times applications switching regulator and high voltage switching applications high speed dc-dc converter applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 15 a i b base current 2 a t c =25 1.5 p c collector power dissipation t a =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3257 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 200 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 250 v v cesat collector-emitter saturation voltage i c =5a;i b =0.5a 1.0 v v besat base-emitter saturation voltage i c =5a;i b =0.5a 1.5 v i cbo collector cut-off current v cb =200v;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =10ma ; v ce =5v 15 h fe-2 dc current gain i c =5a ; v ce =5v 20 80 switching times t r rise time 1.0 s t s storage time 2.5 s t f fall time i b1 =-i b2 =0.6a;v cc = 150v r l =25 ? 1.0 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3257 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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